All MOSFET. MDF15N60GTH Datasheet

 

MDF15N60GTH Datasheet and Replacement


   Type Designator: MDF15N60GTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 258 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F
 

 MDF15N60GTH substitution

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MDF15N60GTH Datasheet (PDF)

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MDF15N60GTH

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 15A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GSquality. Applications These devices are sui

Datasheet: MDF10N65BTH , MDF11N60TH , MDF11N65BTH , MDF12N50BTH , MDF12N50FTH , MDF13N50BTH , MDF13N50GTH , MDF13N65BTH , AON6414A , MDF16N50GTH , MDF18N50BTH , MDF1903TH , MDF2N60BTH , MDF2N60TH , MDF2N60TP , MDF3752TH , MDF4N60BTH .

History: SIHB6N65E | IXTH12N100

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