MDF15N60GTH Specs and Replacement
Type Designator: MDF15N60GTH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 86 nS
Cossⓘ - Output Capacitance: 258 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220F
MDF15N60GTH substitution
- MOSFET ⓘ Cross-Reference Search
MDF15N60GTH datasheet
mdf15n60gth mdp15n60gth.pdf
MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 15A @ V = 10V D GS state resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GS quality. Applications These devices are sui... See More ⇒
Detailed specifications: MDF10N65BTH, MDF11N60TH, MDF11N65BTH, MDF12N50BTH, MDF12N50FTH, MDF13N50BTH, MDF13N50GTH, MDF13N65BTH, IRFB4227, MDF16N50GTH, MDF18N50BTH, MDF1903TH, MDF2N60BTH, MDF2N60TH, MDF2N60TP, MDF3752TH, MDF4N60BTH
Keywords - MDF15N60GTH MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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