All MOSFET. MDF16N50GTH Datasheet

 

MDF16N50GTH Datasheet and Replacement


   Type Designator: MDF16N50GTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 88.5 nS
   Cossⓘ - Output Capacitance: 226 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-220F
 

 MDF16N50GTH substitution

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MDF16N50GTH Datasheet (PDF)

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MDF16N50GTH

MDP16N50G / MDF16N50G N-Channel MOSFET 500V, 16.0 A, 0.35 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChips MOSFET Technology, which provides low on-ID = 16A @VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.35 @VGS = 10V quality. These devices are suitable d

Datasheet: MDF11N60TH , MDF11N65BTH , MDF12N50BTH , MDF12N50FTH , MDF13N50BTH , MDF13N50GTH , MDF13N65BTH , MDF15N60GTH , IRFB4115 , MDF18N50BTH , MDF1903TH , MDF2N60BTH , MDF2N60TH , MDF2N60TP , MDF3752TH , MDF4N60BTH , MDF4N60DTH .

History: MDF4N60BTH | MDF18N50BTH

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