All MOSFET. MDF1903TH Datasheet

 

MDF1903TH Datasheet and Replacement


   Type Designator: MDF1903TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.6 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-220F
 

 MDF1903TH substitution

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MDF1903TH Datasheet (PDF)

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MDF1903TH

MDF1903 Single N-channel Trench MOSFET 100V, 12A, 110m Features General Description The MDF1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 12A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDF1903 is suitable device for DC to DC

Datasheet: MDF12N50BTH , MDF12N50FTH , MDF13N50BTH , MDF13N50GTH , MDF13N65BTH , MDF15N60GTH , MDF16N50GTH , MDF18N50BTH , IRFB4110 , MDF2N60BTH , MDF2N60TH , MDF2N60TP , MDF3752TH , MDF4N60BTH , MDF4N60DTH , MDF4N60TH , MDF4N60TP .

History: TK15A60U | IRF6785M | STLT19 | FQB50N06LTM | CED3423 | FSS923AOR | FNK6075K

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