All MOSFET. MDF8N60BTH Datasheet

 

MDF8N60BTH Datasheet and Replacement


   Type Designator: MDF8N60BTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.1 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: TO-220F
 

 MDF8N60BTH substitution

   - MOSFET ⓘ Cross-Reference Search

 

MDF8N60BTH Datasheet (PDF)

 ..1. Size:835K  magnachip
 mdf8n60bth.pdf pdf_icon

MDF8N60BTH

MDF8N60B N-Channel MOSFET 600V, 8A, 1.05General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 8.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 1.05 @ VGS = 10V quality. Applications These devices are suitable device for SMP

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - MDF8N60BTH MOSFET datasheet

 MDF8N60BTH cross reference
 MDF8N60BTH equivalent finder
 MDF8N60BTH lookup
 MDF8N60BTH substitution
 MDF8N60BTH replacement

 

 
Back to Top

 


 
.