MDF8N60BTH Specs and Replacement
Type Designator: MDF8N60BTH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 18.1 nC
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 108 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: TO-220F
MDF8N60BTH substitution
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MDF8N60BTH datasheet
mdf8n60bth.pdf
MDF8N60B N-Channel MOSFET 600V, 8A, 1.05 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 8.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 1.05 @ VGS = 10V quality. Applications These devices are suitable device for SMP... See More ⇒
Detailed specifications: MDF5N50FTH, MDF5N50ZTH, MDF6N60BTH, MDF6N60TH, MDF6N65BTH, MDF7N50BTH, MDF7N60BTH, MDF7N65BTH, SPP20N60C3, MDF9N50BTH, MDF9N50FTH, MDF9N60BTH, MDFS10N60DTH, MDFS4N65DTH, MDH3331RH, MDH3331RP, MDHT3N40URH
Keywords - MDF8N60BTH MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: APT50M60L2VRG | JMSH2010PC
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