All MOSFET. MDFS10N60DTH Datasheet

 

MDFS10N60DTH Datasheet and Replacement


   Type Designator: MDFS10N60DTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220FS
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MDFS10N60DTH Datasheet (PDF)

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MDFS10N60DTH

MDFS10N60D N-Channel MOSFET 600V, 10A, 0.75General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.75 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Spee

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History: SPB80P06PG | SSF80R500S | PK516BA | DMN4009LK3 | TPCA8102 | STP80NS04ZB | FK330309

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