MDFS10N60DTH MOSFET Datasheet: N-Ch, 600V, 10A. Full specification with pinout and replacement list

MDFS10N60DTH Specs and Replacement

Type Designator: MDFS10N60DTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 42.9 nC

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220FS

MDFS10N60DTH substitution

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MDFS10N60DTH datasheet

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MDFS10N60D N-Channel MOSFET 600V, 10A, 0.75 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.75 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Spee... See More ⇒

Detailed specifications: MDF6N65BTH, MDF7N50BTH, MDF7N60BTH, MDF7N65BTH, MDF8N60BTH, MDF9N50BTH, MDF9N50FTH, MDF9N60BTH, AON7410, MDFS4N65DTH, MDH3331RH, MDH3331RP, MDHT3N40URH, MDHT4N20YURH, MDHT4N25URH, MDHT7N25URH, MDI1752TH