All MOSFET. MDFS4N65DTH Datasheet

 

MDFS4N65DTH Datasheet and Replacement


   Type Designator: MDFS4N65DTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.6 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.55 Ohm
   Package: TO-220FS
 

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MDFS4N65DTH Datasheet (PDF)

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MDFS4N65DTH

MDFS4N65D N-Channel MOSFET 650V, 4.0A, 2.55General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.55 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Spe

Datasheet: MDF7N50BTH , MDF7N60BTH , MDF7N65BTH , MDF8N60BTH , MDF9N50BTH , MDF9N50FTH , MDF9N60BTH , MDFS10N60DTH , IRF1010E , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH .

History: AON2401 | SUM90N03-2M2P

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