MDFS4N65DTH MOSFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

MDFS4N65DTH Specs and Replacement

Type Designator: MDFS4N65DTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 13.5 nC

tr ⓘ - Rise Time: 17.6 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.55 Ohm

Package: TO-220FS

MDFS4N65DTH substitution

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MDFS4N65DTH datasheet

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MDFS4N65D N-Channel MOSFET 650V, 4.0A, 2.55 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.55 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Spe... See More ⇒

Detailed specifications: MDF7N50BTH, MDF7N60BTH, MDF7N65BTH, MDF8N60BTH, MDF9N50BTH, MDF9N50FTH, MDF9N60BTH, MDFS10N60DTH, 12N60, MDH3331RH, MDH3331RP, MDHT3N40URH, MDHT4N20YURH, MDHT4N25URH, MDHT7N25URH, MDI1752TH, MDI1N60STH