MDHT3N40URH Specs and Replacement
Type Designator: MDHT3N40URH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 27 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: SOT-223
MDHT3N40URH substitution
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MDHT3N40URH datasheet
mdht3n40urh.pdf
MDHT3N40 N-Channel MOSFET 400V, 1.5A, 3.4 General Description Features The MDHT3N40 uses advanced Magnachip s VDS = 400V MOSFET Technology, which provides low on-state @VGS = 10V ID = 1.5A resistance, high switching performance and @VGS = 10V RDS(ON) 3.4 excellent quality. MDHT3N40 is suitable device for SMPS, HID and general purpose applications. Applications ... See More ⇒
Detailed specifications: MDF8N60BTH , MDF9N50BTH , MDF9N50FTH , MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , MDH3331RP , IRFB3607 , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH , MDI5N40TH .
Keywords - MDHT3N40URH MOSFET specs
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MDHT3N40URH replacement
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