All MOSFET. MDHT3N40URH Datasheet

 

MDHT3N40URH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDHT3N40URH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 1.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 27 pF

Maximum Drain-Source On-State Resistance (Rds): 3.4 Ohm

Package: SOT-223

MDHT3N40URH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDHT3N40URH Datasheet (PDF)

0.1. mdht3n40urh.pdf Size:1123K _magnachip

MDHT3N40URH
MDHT3N40URH

 MDHT3N40 N-Channel MOSFET 400V, 1.5A, 3.4Ω General Description Features The MDHT3N40 uses advanced Magnachip’s VDS = 400V MOSFET Technology, which provides low on-state @VGS = 10V ID = 1.5A resistance, high switching performance and @VGS = 10V RDS(ON) ≤ 3.4Ω excellent quality. MDHT3N40 is suitable device for SMPS, HID and general purpose applications. Applications

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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