All MOSFET. MDHT4N20YURH Datasheet


MDHT4N20YURH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDHT4N20YURH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 0.85 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 38 nS

Drain-Source Capacitance (Cd): 42.7 pF

Maximum Drain-Source On-State Resistance (Rds): 1.35 Ohm

Package: SOT-223

MDHT4N20YURH Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MDHT4N20YURH Datasheet (PDF)

0.1. mdht4n20yurh.pdf Size:901K _magnachip


 MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω General Description Features The MDHT4N20Y uses advanced Magnachip’s  V = 200V DS MOSFET Technology, which provides low on-state  I = 0.85A @V = 10V D GS resistance, high switching performance and  RDS(ON) ≤ 1.35Ω @VGS = 10V excellent quality. MDHT4N20Y is suitable device for LED TV and general purpose applicat

7.1. mdht4n25urh.pdf Size:878K _magnachip


 MDHT4N25 N-Channel MOSFET 250V, 0.83A, 1.75Ω General Description Features The MDHT4N25 uses advanced Magnachip’s  V = 250V DS MOSFET Technology, which provides low on-state  I = 0.83A D resistance, high switching performance and  RDS(ON) ≤ 1.75Ω @VGS = 10V excellent quality. Applications MDHT4N25 is suitable device for SMPS, HID and general purpose appli


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