All MOSFET. MDHT4N20YURH Datasheet

 

MDHT4N20YURH Datasheet and Replacement


   Type Designator: MDHT4N20YURH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 42.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: SOT-223
 

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MDHT4N20YURH Datasheet (PDF)

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MDHT4N20YURH

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35 General Description Features The MDHT4N20Y uses advanced Magnachips V = 200V DSMOSFET Technology, which provides low on-state I = 0.85A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.35 @VGS = 10V excellent quality. MDHT4N20Y is suitable device for LED TV and general purpose applicat

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MDHT4N20YURH

MDHT4N25 N-Channel MOSFET 250V, 0.83A, 1.75 General Description Features The MDHT4N25 uses advanced Magnachips V = 250V DSMOSFET Technology, which provides low on-state I = 0.83A Dresistance, high switching performance and RDS(ON) 1.75 @VGS = 10V excellent quality. Applications MDHT4N25 is suitable device for SMPS, HID and general purpose appli

Datasheet: MDF9N50BTH , MDF9N50FTH , MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , IRLZ44N , MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH .

History: AP9926GEO-HF | UPA2780GR

Keywords - MDHT4N20YURH MOSFET datasheet

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