All MOSFET. MDHT4N20YURH Datasheet

 

MDHT4N20YURH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDHT4N20YURH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.2 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 42.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: SOT-223

 MDHT4N20YURH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDHT4N20YURH Datasheet (PDF)

 ..1. Size:901K  magnachip
 mdht4n20yurh.pdf

MDHT4N20YURH MDHT4N20YURH

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35 General Description Features The MDHT4N20Y uses advanced Magnachips V = 200V DSMOSFET Technology, which provides low on-state I = 0.85A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.35 @VGS = 10V excellent quality. MDHT4N20Y is suitable device for LED TV and general purpose applicat

 7.1. Size:878K  magnachip
 mdht4n25urh.pdf

MDHT4N20YURH MDHT4N20YURH

MDHT4N25 N-Channel MOSFET 250V, 0.83A, 1.75 General Description Features The MDHT4N25 uses advanced Magnachips V = 250V DSMOSFET Technology, which provides low on-state I = 0.83A Dresistance, high switching performance and RDS(ON) 1.75 @VGS = 10V excellent quality. Applications MDHT4N25 is suitable device for SMPS, HID and general purpose appli

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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