MDHT4N25URH Datasheet and Replacement
Type Designator: MDHT4N25URH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.83 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
Package: SOT-223
MDHT4N25URH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDHT4N25URH Datasheet (PDF)
mdht4n25urh.pdf
MDHT4N25 N-Channel MOSFET 250V, 0.83A, 1.75 General Description Features The MDHT4N25 uses advanced Magnachip s V = 250V DS MOSFET Technology, which provides low on-state I = 0.83A D resistance, high switching performance and RDS(ON) 1.75 @VGS = 10V excellent quality. Applications MDHT4N25 is suitable device for SMPS, HID and general purpose appli... See More ⇒
mdht4n20yurh.pdf
MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35 General Description Features The MDHT4N20Y uses advanced Magnachip s V = 200V DS MOSFET Technology, which provides low on-state I = 0.85A @V = 10V D GS resistance, high switching performance and RDS(ON) 1.35 @VGS = 10V excellent quality. MDHT4N20Y is suitable device for LED TV and general purpose applicat... See More ⇒
Datasheet: MDF9N50FTH , MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , IRF530 , MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH .
History: MDI5N40TH
Keywords - MDHT4N25URH MOSFET datasheet
MDHT4N25URH cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: MDI5N40TH
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