MDHT4N25URH Datasheet. Specs and Replacement

Type Designator: MDHT4N25URH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.83 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm

Package: SOT-223

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MDHT4N25URH datasheet

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MDHT4N25URH

MDHT4N25 N-Channel MOSFET 250V, 0.83A, 1.75 General Description Features The MDHT4N25 uses advanced Magnachip s V = 250V DS MOSFET Technology, which provides low on-state I = 0.83A D resistance, high switching performance and RDS(ON) 1.75 @VGS = 10V excellent quality. Applications MDHT4N25 is suitable device for SMPS, HID and general purpose appli... See More ⇒

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 mdht4n20yurh.pdf pdf_icon

MDHT4N25URH

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35 General Description Features The MDHT4N20Y uses advanced Magnachip s V = 200V DS MOSFET Technology, which provides low on-state I = 0.85A @V = 10V D GS resistance, high switching performance and RDS(ON) 1.35 @VGS = 10V excellent quality. MDHT4N20Y is suitable device for LED TV and general purpose applicat... See More ⇒

Detailed specifications: MDF9N50FTH, MDF9N60BTH, MDFS10N60DTH, MDFS4N65DTH, MDH3331RH, MDH3331RP, MDHT3N40URH, MDHT4N20YURH, 12N60, MDHT7N25URH, MDI1752TH, MDI1N60STH, MDI2N60, MDI4N60BTH, MDI5N40TH, MDI6N60BTH, MDI6N65BTH

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