All MOSFET. MDHT7N25URH Datasheet

 

MDHT7N25URH Datasheet and Replacement


   Type Designator: MDHT7N25URH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: SOT-223
 

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MDHT7N25URH Datasheet (PDF)

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MDHT7N25URH

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55 General Description Features The MDHT7N25 uses advanced Magnachips V = 250V DSMOSFET Technology, which provides low on-state I = 1.4A Dresistance, high switching performance and RDS(ON) 0.55 @VGS = 10V excellent quality. Applications MDHT7N25 is suitable device for SMPS, HID and general purpose applica

Datasheet: MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , IRLB4132 , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH .

History: SVFP4N60CADTR | BUK7626-100B | PSMN2R0-60ES | JCS4N70F | BUK7510-100B | MDIB6N70CTH | 2SK3127

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