MDHT7N25URH Datasheet and Replacement
Type Designator: MDHT7N25URH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 78 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: SOT-223
MDHT7N25URH substitution
MDHT7N25URH Datasheet (PDF)
mdht7n25urh.pdf
MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55 General Description Features The MDHT7N25 uses advanced Magnachips V = 250V DSMOSFET Technology, which provides low on-state I = 1.4A Dresistance, high switching performance and RDS(ON) 0.55 @VGS = 10V excellent quality. Applications MDHT7N25 is suitable device for SMPS, HID and general purpose applica
Datasheet: MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , 5N65 , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH .
Keywords - MDHT7N25URH MOSFET datasheet
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History: WFP12N65 | 2SK1961
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