All MOSFET. MDHT7N25URH Datasheet

 

MDHT7N25URH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDHT7N25URH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 1.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 78 pF

Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm

Package: SOT-223

MDHT7N25URH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDHT7N25URH Datasheet (PDF)

0.1. mdht7n25urh.pdf Size:860K _magnachip

MDHT7N25URH
MDHT7N25URH

 MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω General Description Features The MDHT7N25 uses advanced Magnachip’s  V = 250V DS MOSFET Technology, which provides low on-state  I = 1.4A D resistance, high switching performance and  RDS(ON) ≤ 0.55Ω @VGS = 10V excellent quality. Applications MDHT7N25 is suitable device for SMPS, HID and general purpose applica

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