MDHT7N25URH Datasheet. Specs and Replacement

Type Designator: MDHT7N25URH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: SOT-223

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MDHT7N25URH datasheet

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MDHT7N25URH

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55 General Description Features The MDHT7N25 uses advanced Magnachip s V = 250V DS MOSFET Technology, which provides low on-state I = 1.4A D resistance, high switching performance and RDS(ON) 0.55 @VGS = 10V excellent quality. Applications MDHT7N25 is suitable device for SMPS, HID and general purpose applica... See More ⇒

Detailed specifications: MDF9N60BTH, MDFS10N60DTH, MDFS4N65DTH, MDH3331RH, MDH3331RP, MDHT3N40URH, MDHT4N20YURH, MDHT4N25URH, 4435, MDI1752TH, MDI1N60STH, MDI2N60, MDI4N60BTH, MDI5N40TH, MDI6N60BTH, MDI6N65BTH, MDIB6N70CTH

Keywords - MDHT7N25URH MOSFET specs

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