All MOSFET. MDI1N60STH Datasheet


MDI1N60STH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDI1N60STH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 1 pF

Maximum Drain-Source On-State Resistance (Rds): 8.5 Ohm

Package: I-PAK

MDI1N60STH Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MDI1N60STH Datasheet (PDF)

0.1. mdi1n60sth.pdf Size:766K _magnachip


 MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5Ω General Description Features The MDI1N60S uses advanced MagnaChip’s V = 600V DS MOSFET technology, which provides low on-state ID = 1.0A @VGS = 10V resistance, high switching performance and R ≤ 8.5Ω @V = 10V DS(ON) GS excellent quality. MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general

Datasheet: MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , J112 , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH .


Back to Top