All MOSFET. MDI1N60STH Datasheet

 

MDI1N60STH Datasheet and Replacement


   Type Designator: MDI1N60STH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: I-PAK
 

 MDI1N60STH substitution

   - MOSFET ⓘ Cross-Reference Search

 

MDI1N60STH Datasheet (PDF)

 ..1. Size:766K  magnachip
 mdi1n60sth.pdf pdf_icon

MDI1N60STH

MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5 General Description Features The MDI1N60S uses advanced MagnaChips V = 600V DSMOSFET technology, which provides low on-state ID = 1.0A @VGS = 10V resistance, high switching performance and R 8.5 @V = 10V DS(ON) GSexcellent quality. MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general

Datasheet: MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , IRFP250 , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH .

History: AOB2608L | JCS540FT

Keywords - MDI1N60STH MOSFET datasheet

 MDI1N60STH cross reference
 MDI1N60STH equivalent finder
 MDI1N60STH lookup
 MDI1N60STH substitution
 MDI1N60STH replacement

 

 
Back to Top

 


 
.