MDI1N60STH PDF and Equivalents Search

 

MDI1N60STH Specs and Replacement

Type Designator: MDI1N60STH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: I-PAK

MDI1N60STH substitution

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MDI1N60STH datasheet

 ..1. Size:766K  magnachip
 mdi1n60sth.pdf pdf_icon

MDI1N60STH

MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5 General Description Features The MDI1N60S uses advanced MagnaChip s V = 600V DS MOSFET technology, which provides low on-state ID = 1.0A @VGS = 10V resistance, high switching performance and R 8.5 @V = 10V DS(ON) GS excellent quality. MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general... See More ⇒

Detailed specifications: MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , AON7506 , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH .

History: BUK9775-55

Keywords - MDI1N60STH MOSFET specs

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