MDI1N60STH Specs and Replacement
Type Designator: MDI1N60STH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: I-PAK
MDI1N60STH substitution
MDI1N60STH datasheet
mdi1n60sth.pdf
MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5 General Description Features The MDI1N60S uses advanced MagnaChip s V = 600V DS MOSFET technology, which provides low on-state ID = 1.0A @VGS = 10V resistance, high switching performance and R 8.5 @V = 10V DS(ON) GS excellent quality. MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general... See More ⇒
Detailed specifications: MDFS4N65DTH , MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , AON7506 , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH .
Keywords - MDI1N60STH MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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