MDIB6N70CTH PDF and Equivalents Search

 

MDIB6N70CTH Specs and Replacement

Type Designator: MDIB6N70CTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 112 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23.3 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO-251

MDIB6N70CTH substitution

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MDIB6N70CTH datasheet

 ..1. Size:779K  magnachip
 mdib6n70cth.pdf pdf_icon

MDIB6N70CTH

MDIB6N70C N-Channel MOSFET 700V, 5.0A, 1.8 General Description Features The MDIB6N70C use advanced Magnachip s VDS = 700V MOSFET Technology, which provides low on-state @VGS = 10V ID = 5.0A resistance, high switching performance and @VGS = 10V RDS(ON) 1.8 excellent quality. MDIB6N70C is suitable device for SMPS, HID and general purpose applications. Applications... See More ⇒

Detailed specifications: MDHT7N25URH, MDI1752TH, MDI1N60STH, MDI2N60, MDI4N60BTH, MDI5N40TH, MDI6N60BTH, MDI6N65BTH, 4N60, MDIS1501TH, MDIS1502TH, MDIS1903TH, MDIS2N60TH, MDIS2N65BTH, MDIS3N40TH, MDIS4N65BTH, MDIS5N40TH

Keywords - MDIB6N70CTH MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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