All MOSFET. MDIB6N70CTH Datasheet

 

MDIB6N70CTH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDIB6N70CTH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 112 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 23.3 nS

Drain-Source Capacitance (Cd): 95 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO-251

MDIB6N70CTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDIB6N70CTH Datasheet (PDF)

1.1. mdib6n70cth.pdf Size:779K _magnachip

MDIB6N70CTH
MDIB6N70CTH

MDIB6N70C N-Channel MOSFET 700V, 5.0A, 1.8Ω General Description Features The MDIB6N70C use advanced Magnachip’s VDS = 700V MOSFET Technology, which provides low on-state @VGS = 10V ID = 5.0A resistance, high switching performance and @VGS = 10V RDS(ON) ≤ 1.8Ω excellent quality. MDIB6N70C is suitable device for SMPS, HID and general purpose applications. Applications

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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