All MOSFET. MDIB6N70CTH Datasheet

 

MDIB6N70CTH Datasheet and Replacement


   Type Designator: MDIB6N70CTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 112 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.3 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-251
 

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MDIB6N70CTH Datasheet (PDF)

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MDIB6N70CTH

MDIB6N70C N-Channel MOSFET 700V, 5.0A, 1.8General Description Features The MDIB6N70C use advanced Magnachips VDS = 700V MOSFET Technology, which provides low on-state @VGS = 10V ID = 5.0A resistance, high switching performance and @VGS = 10V RDS(ON) 1.8 excellent quality. MDIB6N70C is suitable device for SMPS, HID and general purpose applications. Applications

Datasheet: MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , 10N65 , MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH , MDIS2N65BTH , MDIS3N40TH , MDIS4N65BTH , MDIS5N40TH .

History: PSMN2R0-60ES

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