MDIS1501TH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDIS1501TH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 44.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7
V
|Id|ⓘ - Maximum Drain Current: 67.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 12.2
nS
Cossⓘ -
Output Capacitance: 261
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056
Ohm
Package: TO-251-VS
MDIS1501TH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDIS1501TH
Datasheet (PDF)
..1. Size:704K magnachip
mdis1501th.pdf 
MDIS1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6mGeneral Description Features The MDIS1501 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 67.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDIS1501 is suitable device for DC to DC
7.1. Size:693K magnachip
mdis1502th.pdf
MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mGeneral Description Features The MDIS1502 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 45.7A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDIS1502 is suitable device for DC to DC
9.1. Size:805K magnachip
mdis1903th.pdf
MDIS1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDIS1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 12.8A @V = 10V D GSresistance, fast switching performance and excellent RDS(ON) (MAX) quality. MDIS1903 is suitable device for DC to DC
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
