All MOSFET. MDIS2N65BTH Datasheet

 

MDIS2N65BTH Datasheet and Replacement


   Type Designator: MDIS2N65BTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.95 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24.2 nS
   Cossⓘ - Output Capacitance: 34.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO-251-VS
 

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MDIS2N65BTH Datasheet (PDF)

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MDIS2N65BTH

MDIS2N65B N-Channel MOSFET 650V, 1.95A, 4.5 General Description Features The MDIS2N65B uses advanced MagnaChips V = 650V DSMOSFET technology, which provides low on-state I = 1.95A @V = 10V D GSresistance, high switching performance and RDS(ON) 4.5 @VGS = 10V excellent quality. MDIS2N65B is suitable device for SMPS, compact ballast, battery charge

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MDIS2N65BTH

MDIS2N60 N-Channel MOSFET 600V, 1.9A, 4.5General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 1.9A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 4.5 @ VGS = 10V quality. Applications These devices are suitable device for SM

Datasheet: MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH , 13N50 , MDIS3N40TH , MDIS4N65BTH , MDIS5N40TH , MDIS5N50TH , MDP10N50TH , MDP10N60GTH , MDP11N60TH , MDP12N50BTH .

History: PK6H6BA | AOB280L | AP65SL380DI | CEG8205 | F3F90HVX2 | SI3420 | CEM4946

Keywords - MDIS2N65BTH MOSFET datasheet

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