All MOSFET. MDP11N60TH Datasheet

 

MDP11N60TH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDP11N60TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 182 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 11 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 38.4 nC
   Rise Time (tr): 50 nS
   Drain-Source Capacitance (Cd): 184 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm
   Package: TO-220

 MDP11N60TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDP11N60TH Datasheet (PDF)

 ..1. Size:786K  magnachip
 mdp11n60th.pdf

MDP11N60TH MDP11N60TH

MDP11N60 N-Channel MOSFET 600V, 11A, 0.55 General Description Features The MDP11N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V DSswitching performance and excellent quality. I = 11A @ V = 10V D GS RDS(ON) 0.55 @ VGS = 10V MDP11N60 is suitable device for SMPS, high Speed switching Applications

 ..2. Size:289K  inchange semiconductor
 mdp11n60th.pdf

MDP11N60TH MDP11N60TH

isc N-Channel MOSFET Transistor MDP11N60THFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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