MDP11N60 N-Channel MOSFET 600V, 11A, 0.55 General Description Features The MDP11N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V DSswitching performance and excellent quality. I = 11A @ V = 10V D GS RDS(ON) 0.55 @ VGS = 10V MDP11N60 is suitable device for SMPS, high Speed switching Applications

isc N-Channel MOSFET Transistor MDP11N60THFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole