All MOSFET. MDP14N25CTP Datasheet

 

MDP14N25CTP Datasheet and Replacement


   Type Designator: MDP14N25CTP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 126.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-220
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MDP14N25CTP Datasheet (PDF)

 ..1. Size:822K  magnachip
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MDP14N25CTP

MDP14N25C N-Channel MOSFET 250V, 14A, 0.28 General Description Features The MDP14N25C is produced using advanced MagnaChips V = 250V DSMOSFET Technology, which provides low on-state resistance, I = 14A @ V = 10V D GShigh switching performance and excellent quality. R 0.28 @ V = 10V DS(ON) GSThese devices are suitable device for SMPS, high Speed Appl

 4.1. Size:206K  inchange semiconductor
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MDP14N25CTP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP14N25CTHFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXI

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIHF30N60E | BRCS200P03DP | IRFB3004GPBF | BUK7618-30 | SWP060R65E7T | LKK47-06C5 | TSM4424CS

Keywords - MDP14N25CTP MOSFET datasheet

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