All MOSFET. MDP1723TH Datasheet

 

MDP1723TH Datasheet and Replacement


   Type Designator: MDP1723TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.7 nS
   Cossⓘ - Output Capacitance: 1830 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO-220
 

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MDP1723TH Datasheet (PDF)

 ..1. Size:1119K  magnachip
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MDP1723TH

MDP1723 Single N-channel Trench MOSFET 40V, 120A, 2.3m General Description Features The MDP1723 uses advanced MagnaChips MOSFET V = 40V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1723 is suitable device for Synchronous

 7.1. Size:245K  inchange semiconductor
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MDP1723TH

isc N-Channel MOSFET Transistor MDP1723FEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS

Datasheet: MDP12N50BTH , MDP12N50FTH , MDP13N50BTH , MDP13N50GTH , MDP14N25CTH , MDP14N25CTP , MDP15N60GTH , MDP16N50GTH , IRFZ48N , MDP18N50BTH , MDP1901TH , MDP1921TH , MDP1922TH , MDP1923TH , MDP1930TH , MDP1932TH , MDP1933TH .

History: IXTH12N100 | SIHB6N65E

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