MDP1723TH Datasheet and Replacement
Type Designator: MDP1723TH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 138.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 88.3 nC
tr ⓘ - Rise Time: 14.7 nS
Cossⓘ - Output Capacitance: 1830 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: TO-220
MDP1723TH substitution
MDP1723TH Datasheet (PDF)
mdp1723th.pdf
MDP1723 Single N-channel Trench MOSFET 40V, 120A, 2.3m General Description Features The MDP1723 uses advanced MagnaChips MOSFET V = 40V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1723 is suitable device for Synchronous
mdp1723.pdf
isc N-Channel MOSFET Transistor MDP1723FEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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