MDP4N60TH PDF and Equivalents Search

 

MDP4N60TH Specs and Replacement

Type Designator: MDP4N60TH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 92.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-220

MDP4N60TH substitution

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MDP4N60TH datasheet

 ..1. Size:1239K  magnachip
 mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdf pdf_icon

MDP4N60TH

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GS quality. Applications These devices are suitable ... See More ⇒

Detailed specifications: MDP1921TH, MDP1922TH, MDP1923TH, MDP1930TH, MDP1932TH, MDP1933TH, MDP2N60TH, MDP2N60TP, EMB04N03H, MDP4N60TP, MDP5N50BTH, MDP5N50FTH, MDP5N50ZTH, MDP6N60TH, MDP7N50BTH, MDP7N60BTH, MDP7N60TH

Keywords - MDP4N60TH MOSFET specs

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