All MOSFET. MDP4N60TH Datasheet

 

MDP4N60TH Datasheet and Replacement


   Type Designator: MDP4N60TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 92.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12.1 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-220
 

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MDP4N60TH Datasheet (PDF)

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MDP4N60TH

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable

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History: JCS640VH

Keywords - MDP4N60TH MOSFET datasheet

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