All MOSFET. MDP6N60TH Datasheet

 

MDP6N60TH Datasheet and Replacement


   Type Designator: MDP6N60TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 131 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15.4 nC
   tr ⓘ - Rise Time: 23.2 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220
 

 MDP6N60TH substitution

   - MOSFET ⓘ Cross-Reference Search

 

MDP6N60TH Datasheet (PDF)

 ..1. Size:1095K  magnachip
 mdf6n60th mdp6n60th.pdf pdf_icon

MDP6N60TH

MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CS640A8H | FQD5N40TF

Keywords - MDP6N60TH MOSFET datasheet

 MDP6N60TH cross reference
 MDP6N60TH equivalent finder
 MDP6N60TH lookup
 MDP6N60TH substitution
 MDP6N60TH replacement

 

 
Back to Top

 


 
.