All MOSFET. MDP6N60TH Datasheet

 

MDP6N60TH Datasheet and Replacement


   Type Designator: MDP6N60TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 131 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.2 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220
 

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MDP6N60TH Datasheet (PDF)

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MDP6N60TH

MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

Datasheet: MDP1933TH , MDP2N60TH , MDP2N60TP , MDP4N60TH , MDP4N60TP , MDP5N50BTH , MDP5N50FTH , MDP5N50ZTH , AO4468 , MDP7N50BTH , MDP7N60BTH , MDP7N60TH , MDP8N60TH , MDP9N50BTH , MDP9N60TH , MDQ16N50GTH , MDQ16N50GTP .

History: JCS5N60FB | NTGS3443

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