All MOSFET. MDP6N60TH Datasheet

 

MDP6N60TH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDP6N60TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 131 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.4 nC
   trⓘ - Rise Time: 23.2 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220

 MDP6N60TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDP6N60TH Datasheet (PDF)

 ..1. Size:1095K  magnachip
 mdf6n60th mdp6n60th.pdf

MDP6N60TH MDP6N60TH

MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRFU3709 | IRFAE40

 

 
Back to Top