MDP6N60TH Specs and Replacement
Type Designator: MDP6N60TH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 131 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23.2 nS
Cossⓘ - Output Capacitance: 78 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220
MDP6N60TH substitution
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MDP6N60TH datasheet
mdf6n60th mdp6n60th.pdf
MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for SM... See More ⇒
Detailed specifications: MDP1933TH, MDP2N60TH, MDP2N60TP, MDP4N60TH, MDP4N60TP, MDP5N50BTH, MDP5N50FTH, MDP5N50ZTH, 60N06, MDP7N50BTH, MDP7N60BTH, MDP7N60TH, MDP8N60TH, MDP9N50BTH, MDP9N60TH, MDQ16N50GTH, MDQ16N50GTP
Keywords - MDP6N60TH MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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