All MOSFET. MDP8N60TH Datasheet

 

MDP8N60TH Datasheet and Replacement


   Type Designator: MDP8N60TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 144 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
 

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MDP8N60TH Datasheet (PDF)

 ..1. Size:743K  magnachip
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MDP8N60TH

MDP8N60 N-Channel MOSFET 600V, 8A, 1.0 General Description Features The MDP8N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V @ T DS jmaxswitching performance and excellent quality. I =8.0A @ V = 10V D GS RDS(ON) 1.0 @ VGS = 10V MDP8N60 is suitable device for SMPS, high Speed switching Applicatio

 ..2. Size:289K  inchange semiconductor
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MDP8N60TH

isc N-Channel MOSFET Transistor MDP8N60THFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Datasheet: MDP4N60TP , MDP5N50BTH , MDP5N50FTH , MDP5N50ZTH , MDP6N60TH , MDP7N50BTH , MDP7N60BTH , MDP7N60TH , IRFZ44N , MDP9N50BTH , MDP9N60TH , MDQ16N50GTH , MDQ16N50GTP , MDQ18N50GTH , MDQ18N50GTP , MDQ23N50DTP , MDS1521URH .

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