MDP8N60TH MOSFET Datasheet: N-Ch, 600V, 8A. Full specification with pinout and replacement list

MDP8N60TH Specs and Replacement

Type Designator: MDP8N60TH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 144 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220

MDP8N60TH substitution

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MDP8N60TH datasheet

..1. Size:743K magnachip
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MDP8N60 N-Channel MOSFET 600V, 8A, 1.0 General Description Features The MDP8N60 uses advanced MagnaChip s MOSFET V = 600V DS Technology, which provides low on-state resistance, high V = 660V @ T DS jmax switching performance and excellent quality. I =8.0A @ V = 10V D GS RDS(ON) 1.0 @ VGS = 10V MDP8N60 is suitable device for SMPS, high Speed switching Applicatio... See More ⇒

..2. Size:289K inchange semiconductor
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isc N-Channel MOSFET Transistor MDP8N60TH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

Detailed specifications: MDP4N60TP, MDP5N50BTH, MDP5N50FTH, MDP5N50ZTH, MDP6N60TH, MDP7N50BTH, MDP7N60BTH, MDP7N60TH, IRFZ44N, MDP9N50BTH, MDP9N60TH, MDQ16N50GTH, MDQ16N50GTP, MDQ18N50GTH, MDQ18N50GTP, MDQ23N50DTP, MDS1521URH