All MOSFET. MDQ16N50GTH Datasheet

 

MDQ16N50GTH Datasheet and Replacement


   Type Designator: MDQ16N50GTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 16.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 34.9 nC
   tr ⓘ - Rise Time: 88.5 nS
   Cossⓘ - Output Capacitance: 226 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-247
 
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MDQ16N50GTH Datasheet (PDF)

 ..1. Size:813K  magnachip
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MDQ16N50GTH

MDQ16N50G N-Channel MOSFET 500V, 16.5A, 0.35 General Description Features V = 500V DSThese N-channel MOSFET are produced using advanced I = 16.5A @V = 10V D GSMagnaChips MOSFET Technology, which provides low on- R 0.35 @V = 10V DS(ON) GSstate resistance, high switching performance and excellent quality. Applications These devices are suitab

 4.1. Size:328K  inchange semiconductor
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MDQ16N50GTH

isc N-Channel MOSFET Transistor MDQ16N50GTPFEATURESDrain Current : I = 16.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.35(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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