MDQ18N50GTH MOSFET Datasheet: N-Ch, 500V, 20A. Full specification with pinout and replacement list

MDQ18N50GTH Specs and Replacement

Type Designator: MDQ18N50GTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 302 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO-247

MDQ18N50GTH substitution

- MOSFET ⓘ Cross-Reference Search

MDQ18N50GTH datasheet

..1. Size:915K magnachip
mdq18n50gth mdq18n50gtp.pdf pdf_icon

MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27 General Description Features . V = 500V DS These N-channel MOSFET are produced using advanced I = 20.0A @ V = 10V D GS MagnaChip s MOSFET Technology, which provides low on- R 0.27 @ V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are s... See More ⇒

4.1. Size:328K inchange semiconductor
mdq18n50gtp.pdf pdf_icon

isc N-Channel MOSFET Transistor MDQ18N50GTP FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

Detailed specifications: MDP7N50BTH, MDP7N60BTH, MDP7N60TH, MDP8N60TH, MDP9N50BTH, MDP9N60TH, MDQ16N50GTH, MDQ16N50GTP, IRF540N, MDQ18N50GTP, MDQ23N50DTP, MDS1521URH, MDS1524URH, MDS1525URH, MDS1526URH, MDS1527URH, MDS1528URH