All MOSFET. MDQ18N50GTH Datasheet

 

MDQ18N50GTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDQ18N50GTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 302 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO-247

 MDQ18N50GTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDQ18N50GTH Datasheet (PDF)

 ..1. Size:915K  magnachip
 mdq18n50gth mdq18n50gtp.pdf

MDQ18N50GTH MDQ18N50GTH

MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27 General Description Features . V = 500V DSThese N-channel MOSFET are produced using advanced I = 20.0A @ V = 10V D GSMagnaChips MOSFET Technology, which provides low on- R 0.27 @ V = 10V DS(ON) GSstate resistance, high switching performance and excellent quality. Applications These devices are s

 4.1. Size:328K  inchange semiconductor
 mdq18n50gtp.pdf

MDQ18N50GTH MDQ18N50GTH

isc N-Channel MOSFET Transistor MDQ18N50GTPFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK1483

 

 
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