MDQ23N50DTP MOSFET Datasheet: N-Ch, 500V, 23A. Full specification with pinout and replacement list

MDQ23N50DTP Specs and Replacement

Type Designator: MDQ23N50DTP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 155 nS

Cossⓘ - Output Capacitance: 325 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.245 Ohm

Package: TO-247

MDQ23N50DTP substitution

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MDQ23N50DTP datasheet

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MDQ23N50D N-Channel MOSFET 500V, 23.0A, 0.245 General Description Features . VDS = 500V These N-channel MOSFET are produced using advanced ID = 23.0A @ VGS = 10V MagnaChip s MOSFET Technology, which provides low on- RDS(ON) 0.245 @ VGS = 10V state resistance, high switching performance and excellent quality. Applications These devices are suitable device fo... See More ⇒

..2. Size:328K inchange semiconductor
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isc N-Channel MOSFET Transistor MDQ23N50DTP FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.245 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

Detailed specifications: MDP7N60TH, MDP8N60TH, MDP9N50BTH, MDP9N60TH, MDQ16N50GTH, MDQ16N50GTP, MDQ18N50GTH, MDQ18N50GTP, 50N06, MDS1521URH, MDS1524URH, MDS1525URH, MDS1526URH, MDS1527URH, MDS1528URH, MDS1651URH, MDS1652ERUH