All MOSFET. MDQ23N50DTP Datasheet

 

MDQ23N50DTP Datasheet and Replacement


   Type Designator: MDQ23N50DTP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 76 nC
   tr ⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.245 Ohm
   Package: TO-247
 

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MDQ23N50DTP Datasheet (PDF)

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MDQ23N50DTP

MDQ23N50D N-Channel MOSFET 500V, 23.0A, 0.245General Description Features . VDS = 500V These N-channel MOSFET are produced using advanced ID = 23.0A @ VGS = 10V MagnaChips MOSFET Technology, which provides low on- RDS(ON) 0.245 @ VGS = 10V state resistance, high switching performance and excellent quality. Applications These devices are suitable device fo

 ..2. Size:328K  inchange semiconductor
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MDQ23N50DTP

isc N-Channel MOSFET Transistor MDQ23N50DTPFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.245(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

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