All MOSFET. MDS1754RH Datasheet

 

MDS1754RH Datasheet and Replacement


   Type Designator: MDS1754RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.2 nC
   trⓘ - Rise Time: 17.3 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOIC-8
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MDS1754RH Datasheet (PDF)

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MDS1754RH

MDS1754 N-Channel Trench MOSFET, 40V, 7.6A, 29m Features General Description V = 40V DSThe MDS1754 uses advanced MagnaChips Trench ID = 7.6 (VGS = 10V) MOSFET Technology to provided high performance in R DS(ON)on-state resistance, switching performance and reliability.

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History: HGP028N08A

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