MDS1754RH Specs and Replacement
Type Designator: MDS1754RH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.3 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SOIC-8
MDS1754RH substitution
- MOSFET ⓘ Cross-Reference Search
MDS1754RH datasheet
mds1754rh.pdf
MDS1754 N-Channel Trench MOSFET, 40V, 7.6A, 29m Features General Description V = 40V DS The MDS1754 uses advanced MagnaChip s Trench ID = 7.6 (VGS = 10V) MOSFET Technology to provided high performance in R DS(ON) on-state resistance, switching performance and reliability. ... See More ⇒
Detailed specifications: MDS1527URH, MDS1528URH, MDS1651URH, MDS1652ERUH, MDS1653URH, MDS1654URH, MDS1655URH, MDS1656URH, AON6414A, MDS1903URH, MDS1951URH, MDS3603URH, MDS3604URH, MDS3651URH, MDS3652URH, MDS3653URH, MDS3753EURH
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