All MOSFET. MDS1903URH Datasheet

 

MDS1903URH Datasheet and Replacement


   Type Designator: MDS1903URH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.1 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOIC-8
 

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MDS1903URH Datasheet (PDF)

 ..1. Size:805K  magnachip
 mds1903urh.pdf pdf_icon

MDS1903URH

MDS1903 Single N-channel Trench MOSFET 100V, 3.3A, 110m General Description Features The MDS1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 3.3A @V = 10V D GSresistance, fast switching performance and excellent RDS(ON) (MAX) quality. MDS1903 is suitable device for DC to DC

 9.1. Size:787K  magnachip
 mds1951urh.pdf pdf_icon

MDS1903URH

MDS1951 Single N-Channel Trench MOSFET 60V, 6A, 45m General Description Features V = 60V The MDS1951 uses advanced Magnachips DS I = 6A @V = 10V D GSMOSFET Technology, which provides low on-state RDS(ON) resistance, high switching performance and

Datasheet: MDS1528URH , MDS1651URH , MDS1652ERUH , MDS1653URH , MDS1654URH , MDS1655URH , MDS1656URH , MDS1754RH , IRFB4115 , MDS1951URH , MDS3603URH , MDS3604URH , MDS3651URH , MDS3652URH , MDS3653URH , MDS3753EURH , MDS3754ARH .

History: TK25N60X | TK25A60X5

Keywords - MDS1903URH MOSFET datasheet

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