All MOSFET. MDS1951URH Datasheet

 

MDS1951URH Datasheet and Replacement


   Type Designator: MDS1951URH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOIC-8
 

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MDS1951URH Datasheet (PDF)

 ..1. Size:787K  magnachip
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MDS1951URH

MDS1951 Single N-Channel Trench MOSFET 60V, 6A, 45m General Description Features V = 60V The MDS1951 uses advanced Magnachips DS I = 6A @V = 10V D GSMOSFET Technology, which provides low on-state RDS(ON) resistance, high switching performance and

 9.1. Size:805K  magnachip
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MDS1951URH

MDS1903 Single N-channel Trench MOSFET 100V, 3.3A, 110m General Description Features The MDS1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 3.3A @V = 10V D GSresistance, fast switching performance and excellent RDS(ON) (MAX) quality. MDS1903 is suitable device for DC to DC

Datasheet: MDS1651URH , MDS1652ERUH , MDS1653URH , MDS1654URH , MDS1655URH , MDS1656URH , MDS1754RH , MDS1903URH , IRF9540 , MDS3603URH , MDS3604URH , MDS3651URH , MDS3652URH , MDS3653URH , MDS3753EURH , MDS3754ARH , MDS5601URH .

History: IXTY12N06T | AP3P9R0I | JMTE035N04A | IPB70N10SL-16 | IXTY18P10T | IXTY10P15T | AP9924GO

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