MDS1951URH MOSFET Datasheet: N-Ch, 60V, 6A. Full specification with pinout and replacement list

MDS1951URH Specs and Replacement

Type Designator: MDS1951URH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOIC-8

MDS1951URH substitution

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MDS1951URH datasheet

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MDS1951 Single N-Channel Trench MOSFET 60V, 6A, 45m General Description Features V = 60V The MDS1951 uses advanced Magnachip s DS I = 6A @V = 10V D GS MOSFET Technology, which provides low on-state RDS(ON) resistance, high switching performance and ... See More ⇒

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MDS1903 Single N-channel Trench MOSFET 100V, 3.3A, 110m General Description Features The MDS1903 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 3.3A @V = 10V D GS resistance, fast switching performance and excellent RDS(ON) (MAX) quality. MDS1903 is suitable device for DC to DC ... See More ⇒

Detailed specifications: MDS1651URH, MDS1652ERUH, MDS1653URH, MDS1654URH, MDS1655URH, MDS1656URH, MDS1754RH, MDS1903URH, 2N7000, MDS3603URH, MDS3604URH, MDS3651URH, MDS3652URH, MDS3653URH, MDS3753EURH, MDS3754ARH, MDS5601URH