MDS3753EURH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDS3753EURH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 7.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32.7 nC
trⓘ - Rise Time: 7.1 nS
Cossⓘ - Output Capacitance: 221 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO-8
MDS3753EURH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDS3753EURH Datasheet (PDF)
mds3753eurh.pdf
MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30m General Description Features The MDS3753E uses advanced MagnaChips MOSFET V = -40V DSTechnology to provide low on-state resistance, high I = -7.1A @ V = 10V D GS switching performance and excellent reliability R DS(ON)
mds3754arh.pdf
MDS3754A P-Channel Trench MOSFET, -40V, -6.0A, 45m General Description Features The MDS3754A uses advanced Magnachips Trench V = -40V DSMOSFET Technology to provided high performance in on- ID = -6.0 @ VGS = -10V state resistance, switching performance and reliability. R DS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N80 | 2N7109 | FSS9130D | IXFQ24N50P2
History: 2N80 | 2N7109 | FSS9130D | IXFQ24N50P2
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918