All MOSFET. MDS3753EURH Datasheet

 

MDS3753EURH Datasheet and Replacement


   Type Designator: MDS3753EURH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.1 nS
   Cossⓘ - Output Capacitance: 221 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO-8
 

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MDS3753EURH Datasheet (PDF)

 ..1. Size:773K  magnachip
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MDS3753EURH

MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30m General Description Features The MDS3753E uses advanced MagnaChips MOSFET V = -40V DSTechnology to provide low on-state resistance, high I = -7.1A @ V = 10V D GS switching performance and excellent reliability R DS(ON)

 8.1. Size:786K  magnachip
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MDS3753EURH

MDS3754A P-Channel Trench MOSFET, -40V, -6.0A, 45m General Description Features The MDS3754A uses advanced Magnachips Trench V = -40V DSMOSFET Technology to provided high performance in on- ID = -6.0 @ VGS = -10V state resistance, switching performance and reliability. R DS(ON)

Datasheet: MDS1754RH , MDS1903URH , MDS1951URH , MDS3603URH , MDS3604URH , MDS3651URH , MDS3652URH , MDS3653URH , K3569 , MDS3754ARH , MDS5601URH , MDS5651URH , MDS5652URH , MDS5951URH , MDU1401SVRH , MDU1402VRH , MDU1511RH .

History: AOT210L | IXTP130N10T

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