All MOSFET. MDS3753EURH Datasheet

 

MDS3753EURH Datasheet and Replacement


   Type Designator: MDS3753EURH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.1 nS
   Cossⓘ - Output Capacitance: 221 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO-8
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MDS3753EURH Datasheet (PDF)

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MDS3753EURH

MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30m General Description Features The MDS3753E uses advanced MagnaChips MOSFET V = -40V DSTechnology to provide low on-state resistance, high I = -7.1A @ V = 10V D GS switching performance and excellent reliability R DS(ON)

 8.1. Size:786K  magnachip
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MDS3753EURH

MDS3754A P-Channel Trench MOSFET, -40V, -6.0A, 45m General Description Features The MDS3754A uses advanced Magnachips Trench V = -40V DSMOSFET Technology to provided high performance in on- ID = -6.0 @ VGS = -10V state resistance, switching performance and reliability. R DS(ON)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IPI100N04S3-03 | MMSF7P03HDR2 | 2SK3510-S | HSM3115 | KP103J | STD4NK50Z | SL3404

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