All MOSFET. MDS3753EURH Datasheet

 

MDS3753EURH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDS3753EURH

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 7.1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 7.1 nS

Drain-Source Capacitance (Cd): 221 pF

Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm

Package: SO-8

MDS3753EURH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDS3753EURH Datasheet (PDF)

1.1. mds3753eurh.pdf Size:773K _magnachip

MDS3753EURH MDS3753EURH

 MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ General Description Features The MDS3753E uses advanced MagnaChip’s MOSFET  V = -40V DS Technology to provide low on-state resistance, high  I = -7.1A @ V = 10V D GS switching performance and excellent reliability  R DS(ON) <30m @ V = -10V GS Low R and low gate charge operation offer superior DS(ON)

4.1. mds3754arh.pdf Size:786K _magnachip

MDS3753EURH MDS3753EURH

 MDS3754A P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description Features The MDS3754A uses advanced Magnachip’s Trench  V = -40V DS MOSFET Technology to provided high performance in on-  ID = -6.0 @ VGS = -10V state resistance, switching performance and reliability.  R DS(ON) <45m @ V = -10V GS Low R , Low Gate Charge can be offering superior DS(ON) <

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top