All MOSFET. MDS5951URH Datasheet

 

MDS5951URH Datasheet and Replacement


   Type Designator: MDS5951URH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOIC-8
 

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MDS5951URH Datasheet (PDF)

 ..1. Size:607K  magnachip
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MDS5951URH

MDS5951 Dual N-Channel Trench MOSFET 60V, 4.5A, 50m General Description Features V = 60V The MDS5951 uses advanced Magnachips DS I = 4.5A @V = 10V D GSMOSFET Technology, which provides low on-state R DS(ON)resistance, high switching performance and

 ..2. Size:942K  cn vbsemi
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MDS5951URH

MDS5951URHwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

Datasheet: MDS3651URH , MDS3652URH , MDS3653URH , MDS3753EURH , MDS3754ARH , MDS5601URH , MDS5651URH , MDS5652URH , IRF1010E , MDU1401SVRH , MDU1402VRH , MDU1511RH , MDU1512RH , MDU1513URH , MDU1514URH , MDU1515URH , MDU1516URH .

History: AP9585GH

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