MDS5951URH Specs and Replacement
Type Designator: MDS5951URH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOIC-8
MDS5951URH substitution
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MDS5951URH datasheet
mds5951urh.pdf
MDS5951 Dual N-Channel Trench MOSFET 60V, 4.5A, 50m General Description Features V = 60V The MDS5951 uses advanced Magnachip s DS I = 4.5A @V = 10V D GS MOSFET Technology, which provides low on-state R DS(ON) resistance, high switching performance and ... See More ⇒
mds5951urh.pdf
MDS5951URH www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann... See More ⇒
Detailed specifications: MDS3651URH, MDS3652URH, MDS3653URH, MDS3753EURH, MDS3754ARH, MDS5601URH, MDS5651URH, MDS5652URH, IRF9540N, MDU1401SVRH, MDU1402VRH, MDU1511RH, MDU1512RH, MDU1513URH, MDU1514URH, MDU1515URH, MDU1516URH
Keywords - MDS5951URH MOSFET specs
MDS5951URH cross reference
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