MDU1402VRH Datasheet and Replacement
Type Designator: MDU1402VRH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10.5 nS
Cossⓘ - Output Capacitance: 410 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: PDFN56
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MDU1402VRH Datasheet (PDF)
mdu1402vrh.pdf

Preliminary Subject to Change without Notice MDU1402 Single N-channel Trench MOSFET 25V General Description Features The MDU1402 uses advanced MagnaChips MOSFET V = 25V DSTechnology, which provides high performance in on-state I = 66A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1402 is suitable device for DC/DC
mdu1401svrh.pdf

Preliminary Subject to Change without Notice 7.9 MDU1401S Single N-channel Trench MOSFET 25V General Description Features The MDU1401S uses advanced MagnaChips MOSFET V = 25V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1401S is suitable device
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FQD4N25TM | GSM4850WS
Keywords - MDU1402VRH MOSFET datasheet
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History: FQD4N25TM | GSM4850WS



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