All MOSFET. MDU1402VRH Datasheet

 

MDU1402VRH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDU1402VRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: PDFN56

 MDU1402VRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDU1402VRH Datasheet (PDF)

 ..1. Size:1057K  magnachip
 mdu1402vrh.pdf

MDU1402VRH MDU1402VRH

Preliminary Subject to Change without Notice MDU1402 Single N-channel Trench MOSFET 25V General Description Features The MDU1402 uses advanced MagnaChips MOSFET V = 25V DSTechnology, which provides high performance in on-state I = 66A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1402 is suitable device for DC/DC

 8.1. Size:1065K  magnachip
 mdu1401svrh.pdf

MDU1402VRH MDU1402VRH

Preliminary Subject to Change without Notice 7.9 MDU1401S Single N-channel Trench MOSFET 25V General Description Features The MDU1401S uses advanced MagnaChips MOSFET V = 25V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1401S is suitable device

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History: 2SK1336 | IXFN21N100Q | 2SK1188

 

 
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