MDU1931VRH Datasheet and Replacement
Type Designator: MDU1931VRH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 20.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 1.05 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: PDFN56
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MDU1931VRH Datasheet (PDF)
mdu1931vrh.pdf

MDU1931 Single N-channel Trench MOSFET 80V, 100A, 3.6m General Description Features The MDU1931 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1931 is suitable device for Synchronous
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: WSD6040DN56 | STK4N40 | IRFI9Z14G | IXTB30N100L | WSD3042DN56 | JSM7410 | 2SJ360
Keywords - MDU1931VRH MOSFET datasheet
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History: WSD6040DN56 | STK4N40 | IRFI9Z14G | IXTB30N100L | WSD3042DN56 | JSM7410 | 2SJ360



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