MDU1931VRH Specs and Replacement
Type Designator: MDU1931VRH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 1.05 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: PDFN56
MDU1931VRH substitution
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MDU1931VRH datasheet
mdu1931vrh.pdf
MDU1931 Single N-channel Trench MOSFET 80V, 100A, 3.6m General Description Features The MDU1931 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 100A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDU1931 is suitable device for Synchronous ... See More ⇒
Detailed specifications: MDU1517RH, MDU1518URH, MDU1531SURH, MDU1532SURH, MDU1535URH, MDU1536URH, MDU1721VRH, MDU1722VRH, IRF530, MDU2511SVRH, MDU3603RH, MDU3605URH, MDU5512URH, MDU5593SVRH, MDU5692SVRH, MDU5693VRH, MDV1522URH
Keywords - MDU1931VRH MOSFET specs
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History: ELM34608AA
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