MDU1931VRH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDU1931VRH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 1.05 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: PDFN56
MDU1931VRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDU1931VRH Datasheet (PDF)
mdu1931vrh.pdf
MDU1931 Single N-channel Trench MOSFET 80V, 100A, 3.6m General Description Features The MDU1931 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1931 is suitable device for Synchronous
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFU13N15D | AP9938GEY
History: IRFU13N15D | AP9938GEY
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918