All MOSFET. MDU1931VRH Datasheet

 

MDU1931VRH Datasheet and Replacement


   Type Designator: MDU1931VRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 1.05 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: PDFN56
 

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MDU1931VRH Datasheet (PDF)

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MDU1931VRH

MDU1931 Single N-channel Trench MOSFET 80V, 100A, 3.6m General Description Features The MDU1931 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1931 is suitable device for Synchronous

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History: XR46000ESETR

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