All MOSFET. MDU5512URH Datasheet

 

MDU5512URH Datasheet and Replacement


   Type Designator: MDU5512URH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10.9 nS
   Cossⓘ - Output Capacitance: 196 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: PDFN56
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MDU5512URH Datasheet (PDF)

 ..1. Size:1483K  magnachip
 mdu5512urh.pdf pdf_icon

MDU5512URH

MDU5512 Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5512 uses advanced MagnaChips MOSFET FET1 FET2 Technology, which provides high performance in on-state V = 30V V = 30V DS DSresistance, fast switching performance and excellent I = 46.1A I = 80A @V = 10V D D GSquality. MDU5512 is suitable for DC/DC converter and R DS(ON)g

 9.1. Size:1512K  magnachip
 mdu5593svrh.pdf pdf_icon

MDU5512URH

MDU5593S Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5593S uses advanced MagnaChips MOSFET FET1 FET2 Technology, which provides high performance in on-state V = 30V V = 30V DS DSresistance, fast switching performance and excellent I = 34A I = 40A @V = 10V D D GSquality. MDU5593S is suitable for DC/DC converter and R DS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FDMS3604AS | PHP3N50E | SFP9634 | ISZ0901NLS | IXFH110N10P | RSE002P03TL | 2SK3273-01MR

Keywords - MDU5512URH MOSFET datasheet

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