All MOSFET. MDU5512URH Datasheet

 

MDU5512URH Datasheet and Replacement


   Type Designator: MDU5512URH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.9 nS
   Cossⓘ - Output Capacitance: 196 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: PDFN56
 

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MDU5512URH Datasheet (PDF)

 ..1. Size:1483K  magnachip
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MDU5512URH

MDU5512 Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5512 uses advanced MagnaChips MOSFET FET1 FET2 Technology, which provides high performance in on-state V = 30V V = 30V DS DSresistance, fast switching performance and excellent I = 46.1A I = 80A @V = 10V D D GSquality. MDU5512 is suitable for DC/DC converter and R DS(ON)g

 9.1. Size:1512K  magnachip
 mdu5593svrh.pdf pdf_icon

MDU5512URH

MDU5593S Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5593S uses advanced MagnaChips MOSFET FET1 FET2 Technology, which provides high performance in on-state V = 30V V = 30V DS DSresistance, fast switching performance and excellent I = 34A I = 40A @V = 10V D D GSquality. MDU5593S is suitable for DC/DC converter and R DS(ON)

Datasheet: MDU1535URH , MDU1536URH , MDU1721VRH , MDU1722VRH , MDU1931VRH , MDU2511SVRH , MDU3603RH , MDU3605URH , 18N50 , MDU5593SVRH , MDU5692SVRH , MDU5693VRH , MDV1522URH , MDV1523URH , MDV1524URH , MDV1525URH , MDV1526URH .

History: PH2525L | SP8611

Keywords - MDU5512URH MOSFET datasheet

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