All MOSFET. MDU5512URH Datasheet


MDU5512URH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDU5512URH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.9 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V

Maximum Drain Current |Id|: 11.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10.9 nS

Drain-Source Capacitance (Cd): 196 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0089 Ohm

Package: PDFN56

MDU5512URH Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MDU5512URH Datasheet (PDF)

1.1. mdu5512urh.pdf Size:1483K _magnachip


5.1. mdu5593svrh.pdf Size:1512K _magnachip


 MDU5593S Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5593S uses advanced MagnaChip’s MOSFET FET1 FET2 Technology, which provides high performance in on-state  V = 30V V = 30V DS DS resistance, fast switching performance and excellent  I = 34A I = 40A @V = 10V D D GS quality. MDU5593S is suitable for DC/DC converter and  R DS(ON)

Datasheet: MDU1535URH , MDU1536URH , MDU1721VRH , MDU1722VRH , MDU1931VRH , MDU2511SVRH , MDU3603RH , MDU3605URH , IRFZ24N , MDU5593SVRH , MDU5692SVRH , MDU5693VRH , MDV1522URH , MDV1523URH , MDV1524URH , MDV1525URH , MDV1526URH .

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