All MOSFET. MDV3605URH Datasheet

 

MDV3605URH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDV3605URH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 10.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 12.4 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: PDFN33

 MDV3605URH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDV3605URH Datasheet (PDF)

 ..1. Size:926K  magnachip
 mdv3605urh.pdf

MDV3605URH MDV3605URH

MDV3605Single P-Channel Trench MOSFET, -30V, -20A, 18.0m General Description Features The MDV3605 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. ID = -20A @VGS = -10V RDS(ON) This device is suited for Power Management and load

 8.1. Size:833K  magnachip
 mdv3604urh.pdf

MDV3605URH MDV3605URH

MDV3604Single P-Channel Trench MOSFET, -30V, -20A, 12.1m General Description Features The MDV3604 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -20A @V = -10V D GS RDS(ON) This device is suited for Power Management and load

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History: HUFA75307D3 | IRFU310 | LNH2N65 | FQA7N60

 

 
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