MDV3605URH PDF and Equivalents Search

 

MDV3605URH Specs and Replacement

Type Designator: MDV3605URH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.4 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: PDFN33

MDV3605URH substitution

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MDV3605URH datasheet

 ..1. Size:926K  magnachip
 mdv3605urh.pdf pdf_icon

MDV3605URH

MDV3605 Single P-Channel Trench MOSFET, -30V, -20A, 18.0m General Description Features The MDV3605 uses advanced MagnaChip s MOSFET VDS = -30V Technology to provide low on-state resistance. ID = -20A @VGS = -10V RDS(ON) This device is suited for Power Management and load ... See More ⇒

 8.1. Size:833K  magnachip
 mdv3604urh.pdf pdf_icon

MDV3605URH

MDV3604 Single P-Channel Trench MOSFET, -30V, -20A, 12.1m General Description Features The MDV3604 uses advanced MagnaChip s MOSFET VDS = -30V Technology to provide low on-state resistance. I = -20A @V = -10V D GS RDS(ON) This device is suited for Power Management and load ... See More ⇒

Detailed specifications: MDV1527URH, MDV1528URH, MDV1529EURH, MDV1542URH, MDV1545URH, MDV1548URH, MDV1595SURH, MDV3604URH, IRF2807, MDV5524URH, MDZ1N60UMH, 2SK3979, 2SK4118LS, CEP50N06, CEB50N06, FQP16N25C, HY1607P

Keywords - MDV3605URH MOSFET specs

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