All MOSFET. MDV3605URH Datasheet

 

MDV3605URH Datasheet and Replacement


   Type Designator: MDV3605URH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 10.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.4 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: PDFN33
 

 MDV3605URH substitution

   - MOSFET ⓘ Cross-Reference Search

 

MDV3605URH Datasheet (PDF)

 ..1. Size:926K  magnachip
 mdv3605urh.pdf pdf_icon

MDV3605URH

MDV3605Single P-Channel Trench MOSFET, -30V, -20A, 18.0m General Description Features The MDV3605 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. ID = -20A @VGS = -10V RDS(ON) This device is suited for Power Management and load

 8.1. Size:833K  magnachip
 mdv3604urh.pdf pdf_icon

MDV3605URH

MDV3604Single P-Channel Trench MOSFET, -30V, -20A, 12.1m General Description Features The MDV3604 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -20A @V = -10V D GS RDS(ON) This device is suited for Power Management and load

Datasheet: MDV1527URH , MDV1528URH , MDV1529EURH , MDV1542URH , MDV1545URH , MDV1548URH , MDV1595SURH , MDV3604URH , IRFB31N20D , MDV5524URH , MDZ1N60UMH , 2SK3979 , 2SK4118LS , CEP50N06 , CEB50N06 , FQP16N25C , HY1607P .

History: PE532DY | OSG60R1K8PF

Keywords - MDV3605URH MOSFET datasheet

 MDV3605URH cross reference
 MDV3605URH equivalent finder
 MDV3605URH lookup
 MDV3605URH substitution
 MDV3605URH replacement

 

 
Back to Top

 


 
.