All MOSFET. MDV5524URH Datasheet

 

MDV5524URH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDV5524URH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.8 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V

Maximum Drain Current |Id|: 8.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10.2 nS

Drain-Source Capacitance (Cd): 91 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0144 Ohm

Package: PDFN33

MDV5524URH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDV5524URH Datasheet (PDF)

1.1. mdv5524urh.pdf Size:1577K _magnachip

MDV5524URH
MDV5524URH

 MDV5524 Asymmetric Dual N-channel Trench MOSFET 30V General Description Features The MDV5524 uses advanced MagnaChip’s MOSFET FET1 FET2 Technology, which provides high performance in on-state  V = 30V V = 30V DS DS resistance, fast switching performance and excellent  I = 24.5A I = 31.2A @V = 10V D D GS quality. MDV5524 is suitable for DC/DC converter and  R DS(ON)

Datasheet: MDV1528URH , MDV1529EURH , MDV1542URH , MDV1545URH , MDV1548URH , MDV1595SURH , MDV3604URH , MDV3605URH , 2N3824 , MDZ1N60UMH , 2SK3979 , 2SK4118LS , CEP50N06 , CEB50N06 , FQP16N25C , HY1607P , ME15N10 .

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