All MOSFET. MDV5524URH Datasheet

 

MDV5524URH Datasheet and Replacement


   Type Designator: MDV5524URH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.2 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0144 Ohm
   Package: PDFN33
 

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MDV5524URH Datasheet (PDF)

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MDV5524URH

MDV5524 Asymmetric Dual N-channel Trench MOSFET 30V General Description Features The MDV5524 uses advanced MagnaChips MOSFET FET1 FET2 Technology, which provides high performance in on-state V = 30V V = 30V DS DSresistance, fast switching performance and excellent I = 24.5A I = 31.2A @V = 10V D D GSquality. MDV5524 is suitable for DC/DC converter and R DS(ON)

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History: TF2302A

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