MDZ1N60UMH Specs and Replacement
Type Designator: MDZ1N60UMH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: TO-92
MDZ1N60UMH substitution
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MDZ1N60UMH datasheet
mdz1n60umh.pdf
MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5 General Description Features The MDZ1N60 uses advanced MagnaChip s V = 600V DS MOSFET technology, which provides low on-state I = 0.4A @V = 10V D GS resistance, high switching performance and RDS(ON) 8.5 @VGS = 10V excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and g... See More ⇒
Detailed specifications: MDV1529EURH, MDV1542URH, MDV1545URH, MDV1548URH, MDV1595SURH, MDV3604URH, MDV3605URH, MDV5524URH, IRFZ24N, 2SK3979, 2SK4118LS, CEP50N06, CEB50N06, FQP16N25C, HY1607P, ME15N10, MMD50R380P
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AOTF2144L | STT8205S | 3N70L-TF3-T
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