All MOSFET. MDZ1N60UMH Datasheet

 

MDZ1N60UMH Datasheet and Replacement


   Type Designator: MDZ1N60UMH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO-92
 

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MDZ1N60UMH Datasheet (PDF)

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MDZ1N60UMH

MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5 General Description Features The MDZ1N60 uses advanced MagnaChips V = 600V DSMOSFET technology, which provides low on-state I = 0.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 8.5 @VGS = 10V excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and g

Datasheet: MDV1529EURH , MDV1542URH , MDV1545URH , MDV1548URH , MDV1595SURH , MDV3604URH , MDV3605URH , MDV5524URH , AON6380 , 2SK3979 , 2SK4118LS , CEP50N06 , CEB50N06 , FQP16N25C , HY1607P , ME15N10 , MMD50R380P .

History: HMS21N60F | IRFSL3107PBF | AON6206

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