All MOSFET. MDZ1N60UMH Datasheet


MDZ1N60UMH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDZ1N60UMH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 0.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 1 pF

Maximum Drain-Source On-State Resistance (Rds): 8.5 Ohm

Package: TO-92

MDZ1N60UMH Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MDZ1N60UMH Datasheet (PDF)

1.1. mdz1n60umh.pdf Size:969K _magnachip


 MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description Features The MDZ1N60 uses advanced MagnaChip’s  V = 600V DS MOSFET technology, which provides low on-state  I = 0.4A @V = 10V D GS resistance, high switching performance and  RDS(ON) ≤ 8.5Ω @VGS = 10V excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and g

Datasheet: MDV1529EURH , MDV1542URH , MDV1545URH , MDV1548URH , MDV1595SURH , MDV3604URH , MDV3605URH , MDV5524URH , J113 , 2SK3979 , 2SK4118LS , CEP50N06 , CEB50N06 , FQP16N25C , HY1607P , ME15N10 , MMD50R380P .

Back to Top