All MOSFET. MDZ1N60UMH Datasheet

 

MDZ1N60UMH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDZ1N60UMH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.5 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO-92

 MDZ1N60UMH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDZ1N60UMH Datasheet (PDF)

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 mdz1n60umh.pdf

MDZ1N60UMH MDZ1N60UMH

MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5 General Description Features The MDZ1N60 uses advanced MagnaChips V = 600V DSMOSFET technology, which provides low on-state I = 0.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 8.5 @VGS = 10V excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and g

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