MDZ1N60UMH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDZ1N60UMH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 0.4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 1 pF
Maximum Drain-Source On-State Resistance (Rds): 8.5 Ohm
Package: TO-92
MDZ1N60UMH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDZ1N60UMH Datasheet (PDF)
1.1. mdz1n60umh.pdf 
Size:969K _magnachip
MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description Features The MDZ1N60 uses advanced MagnaChip’s V = 600V DS MOSFET technology, which provides low on-state I = 0.4A @V = 10V D GS resistance, high switching performance and RDS(ON) ≤ 8.5Ω @VGS = 10V excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and g
Datasheet: MDV1529EURH , MDV1542URH , MDV1545URH , MDV1548URH , MDV1595SURH , MDV3604URH , MDV3605URH , MDV5524URH , J113 , 2SK3979 , 2SK4118LS , CEP50N06 , CEB50N06 , FQP16N25C , HY1607P , ME15N10 , MMD50R380P .
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