IRFS625 PDF and Equivalents Search

 

IRFS625 Specs and Replacement

Type Designator: IRFS625

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220F

IRFS625 substitution

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IRFS625 datasheet

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 irfs624 irfs625.pdf pdf_icon

IRFS625

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IRFS625

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 irfs624b irf624b.pdf pdf_icon

IRFS625

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to ... See More ⇒

 8.3. Size:281K  1
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IRFS625

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Detailed specifications: IRFS550A, IRFS610A, IRFS614A, IRFS620, IRFS620A, IRFS622, IRFS624, IRFS624A, IRFB3607, IRFS630, IRFS630A, IRFS632, IRFS634, IRFS634A, IRFS635, IRFS640, IRFS640A

Keywords - IRFS625 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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