MSD23N58 PDF and Equivalents Search

 

MSD23N58 Specs and Replacement

Type Designator: MSD23N58

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm

Package: SOT-23

MSD23N58 substitution

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MSD23N58 datasheet

 ..1. Size:710K  bruckewell
 msd23n58.pdf pdf_icon

MSD23N58

Bruckewell Technology Corp., Ltd. MSD23N58 N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards,... See More ⇒

 8.1. Size:948K  bruckewell
 msd23n22.pdf pdf_icon

MSD23N58

Bruckewell Technology Corp., Ltd. MSD23N22 N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards,... See More ⇒

Detailed specifications: ME15N10, MMD50R380P, PDC4801R, PMF250XN, TK10A60W, MSD20N06, MSD20N10, MSD23N22, IRFB7545, MSD2N60, MSD2N70, MSD30N06, MSD30P06, MSD40P03, MSD4N40, MSD4N60, MSD4N70

Keywords - MSD23N58 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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