All MOSFET. MSD23N58 Datasheet

 

MSD23N58 Datasheet and Replacement


   Type Designator: MSD23N58
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
   Package: SOT-23
 

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MSD23N58 Datasheet (PDF)

 ..1. Size:710K  bruckewell
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MSD23N58

Bruckewell Technology Corp., Ltd. MSD23N58 N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards,

 8.1. Size:948K  bruckewell
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MSD23N58

Bruckewell Technology Corp., Ltd. MSD23N22 N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards,

Datasheet: ME15N10 , MMD50R380P , PDC4801R , PMF250XN , TK10A60W , MSD20N06 , MSD20N10 , MSD23N22 , 8N60 , MSD2N60 , MSD2N70 , MSD30N06 , MSD30P06 , MSD40P03 , MSD4N40 , MSD4N60 , MSD4N70 .

History: HUFA75337S3ST | SI1028X | SIHFB9N65A | SUM110N08-07P | BUK961R4-30E | SIHFI620G | TPG70R600M

Keywords - MSD23N58 MOSFET datasheet

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