All MOSFET. MSD2N60 Datasheet

 

MSD2N60 Datasheet and Replacement


   Type Designator: MSD2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
   Package: TO-252
 

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MSD2N60 Datasheet (PDF)

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MSD2N60

MSD2N60 N-Channel Logic Level Enhancement Mode Power MOSFET Description The MSD2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative Ne

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MSD2N60

MSD2N70 700V N-Channel MOSFET Description The MSD2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo

Datasheet: MMD50R380P , PDC4801R , PMF250XN , TK10A60W , MSD20N06 , MSD20N10 , MSD23N22 , MSD23N58 , EMB04N03H , MSD2N70 , MSD30N06 , MSD30P06 , MSD40P03 , MSD4N40 , MSD4N60 , MSD4N70 , MSD50N03 .

History: SM2601PSC | SSF2341E | STD35NF3LLT4 | IXTT140N10P | IRF6665 | QM02N65D | G10N80BF

Keywords - MSD2N60 MOSFET datasheet

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