MSD2N60 MOSFET Datasheet: N-Ch, 600V, 2A. Full specification with pinout and replacement list

MSD2N60 Specs and Replacement

Type Designator: MSD2N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm

Package: TO-252

MSD2N60 substitution

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MSD2N60 datasheet

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MSD2N60 N-Channel Logic Level Enhancement Mode Power MOSFET Description The MSD2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative Ne... See More ⇒

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MSD2N70 700V N-Channel MOSFET Description The MSD2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo... See More ⇒

Detailed specifications: MMD50R380P, PDC4801R, PMF250XN, TK10A60W, MSD20N06, MSD20N10, MSD23N22, MSD23N58, AON7403, MSD2N70, MSD30N06, MSD30P06, MSD40P03, MSD4N40, MSD4N60, MSD4N70, MSD50N03