All MOSFET. MSD2N70 Datasheet

 

MSD2N70 Datasheet and Replacement


   Type Designator: MSD2N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO-252
 

 MSD2N70 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MSD2N70 Datasheet (PDF)

 ..1. Size:985K  bruckewell
 msd2n70.pdf pdf_icon

MSD2N70

MSD2N70 700V N-Channel MOSFET Description The MSD2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo

 9.1. Size:758K  bruckewell
 msd2n60.pdf pdf_icon

MSD2N70

MSD2N60 N-Channel Logic Level Enhancement Mode Power MOSFET Description The MSD2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative Ne

Datasheet: PDC4801R , PMF250XN , TK10A60W , MSD20N06 , MSD20N10 , MSD23N22 , MSD23N58 , MSD2N60 , IRF9640 , MSD30N06 , MSD30P06 , MSD40P03 , MSD4N40 , MSD4N60 , MSD4N70 , MSD50N03 , MSD50N10 .

History: FHP20N60A | FQD30N06LTM | GSM8459 | UTT6NP10G-S08-R | SIA537EDJ | YJP70G10A | QM2N7002E3K1

Keywords - MSD2N70 MOSFET datasheet

 MSD2N70 cross reference
 MSD2N70 equivalent finder
 MSD2N70 lookup
 MSD2N70 substitution
 MSD2N70 replacement

 

 
Back to Top

 


 
.