MSD80N03 PDF and Equivalents Search

 

MSD80N03 Specs and Replacement

Type Designator: MSD80N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-252

MSD80N03 substitution

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MSD80N03 datasheet

 ..1. Size:513K  bruckewell
 msd80n03.pdf pdf_icon

MSD80N03

Bruckewell Technology Corp., Ltd. MSD80N03 N-Channel Enhancement Mode Power MOSFET FEATURES 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Absolute Maximum Ratings (Tc=25 C unless otherwise noted) Pa... See More ⇒

Detailed specifications: MSD30N06, MSD30P06, MSD40P03, MSD4N40, MSD4N60, MSD4N70, MSD50N03, MSD50N10, IRF730, MSE20N06N, MSF10N40, MSF10N60, MSF10N65, MSF10N80, MSF10N80A, MSF12N60, MSF12N65

Keywords - MSD80N03 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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