All MOSFET. MSD80N03 Datasheet

 

MSD80N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSD80N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 83 W
   Maximum Drain-Source Voltage |Vds|: 25 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 80 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 16 nS
   Drain-Source Capacitance (Cd): 620 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm
   Package: TO-252

 MSD80N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSD80N03 Datasheet (PDF)

 ..1. Size:513K  bruckewell
 msd80n03.pdf

MSD80N03 MSD80N03

Bruckewell Technology Corp., Ltd. MSD80N03 N-Channel Enhancement Mode Power MOSFET FEATURES 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Absolute Maximum Ratings (Tc=25C unless otherwise noted) Pa

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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