All MOSFET. MSD80N03 Datasheet

 

MSD80N03 Datasheet and Replacement


   Type Designator: MSD80N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252
 

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MSD80N03 Datasheet (PDF)

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MSD80N03

Bruckewell Technology Corp., Ltd. MSD80N03 N-Channel Enhancement Mode Power MOSFET FEATURES 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Absolute Maximum Ratings (Tc=25C unless otherwise noted) Pa

Datasheet: MSD30N06 , MSD30P06 , MSD40P03 , MSD4N40 , MSD4N60 , MSD4N70 , MSD50N03 , MSD50N10 , BS170 , MSE20N06N , MSF10N40 , MSF10N60 , MSF10N65 , MSF10N80 , MSF10N80A , MSF12N60 , MSF12N65 .

History: PE532DY | OSG60R1K8PF

Keywords - MSD80N03 MOSFET datasheet

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