MSF15N60 Datasheet and Replacement
Type Designator: MSF15N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO-220F
MSF15N60 substitution
MSF15N60 Datasheet (PDF)
msf15n60.pdf

MSF15N60 N-Channel Enhancement Mode Power MOSFET Description The MSF15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance S
Datasheet: MSF10N60 , MSF10N65 , MSF10N80 , MSF10N80A , MSF12N60 , MSF12N65 , MSF13N50 , MSF14N60 , IRFP460 , MSF16N50 , MSF18N50 , MSF20N50 , MSF2N40 , MSF2N60 , MSF2N70 , MSF3N80 , MSF4N60 .
History: IRFSL3107PBF | AON6206
Keywords - MSF15N60 MOSFET datasheet
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History: IRFSL3107PBF | AON6206



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