MSF15N60 Datasheet. Specs and Replacement
Type Designator: MSF15N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO-220F
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MSF15N60 substitution
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MSF15N60 datasheet
msf15n60.pdf
MSF15N60 N-Channel Enhancement Mode Power MOSFET Description The MSF15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance S... See More ⇒
Detailed specifications: MSF10N60, MSF10N65, MSF10N80, MSF10N80A, MSF12N60, MSF12N65, MSF13N50, MSF14N60, IRF640, MSF16N50, MSF18N50, MSF20N50, MSF2N40, MSF2N60, MSF2N70, MSF3N80, MSF4N60
Keywords - MSF15N60 MOSFET specs
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History: MSP02N10 | AP45P06D | PSMN012-60MS | MTB110P10L3 | AP4232GM | AP09N20BGH | 2SK3596-01SJ
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