All MOSFET. MSF16N50 Datasheet

 

MSF16N50 Datasheet and Replacement


   Type Designator: MSF16N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220F
 

 MSF16N50 substitution

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MSF16N50 Datasheet (PDF)

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MSF16N50

MSF16N50 500V N-Channel MOSFET Description The MSF16N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Typical 0.33)@VGS=10V Gate

Datasheet: MSF10N65 , MSF10N80 , MSF10N80A , MSF12N60 , MSF12N65 , MSF13N50 , MSF14N60 , MSF15N60 , IRF1404 , MSF18N50 , MSF20N50 , MSF2N40 , MSF2N60 , MSF2N70 , MSF3N80 , MSF4N60 , MSF4N60L .

History: SI1046R | DMG8880LSS | IXFV110N10P | CS65N20-30 | SQM90142E | IPB120N08S4-03 | C3M0065100K

Keywords - MSF16N50 MOSFET datasheet

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