MSF16N50 Datasheet. Specs and Replacement

Type Designator: MSF16N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-220F

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MSF16N50 datasheet

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MSF16N50

MSF16N50 500V N-Channel MOSFET Description The MSF16N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Typical 0.33 )@VGS=10V Gate... See More ⇒

Detailed specifications: MSF10N65, MSF10N80, MSF10N80A, MSF12N60, MSF12N65, MSF13N50, MSF14N60, MSF15N60, IRF1404, MSF18N50, MSF20N50, MSF2N40, MSF2N60, MSF2N70, MSF3N80, MSF4N60, MSF4N60L

Keywords - MSF16N50 MOSFET specs

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