MSK19N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: MSK19N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 423 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
Package: DFN3X3
MSK19N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSK19N03 Datasheet (PDF)
..1. Size:249K bruckewell
msk19n03.pdf
msk19n03.pdf
Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ N-Channel 30-V (D-S) MOSFET MSK19N03 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compu
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