All MOSFET. MSK19N03 Datasheet

 

MSK19N03 Datasheet and Replacement


   Type Designator: MSK19N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 423 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
   Package: DFN3X3
 

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MSK19N03 Datasheet (PDF)

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MSK19N03

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ N-Channel 30-V (D-S) MOSFET MSK19N03 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compu

Datasheet: MSF7N65 , MSF7N80 , MSF8N50 , MSF8N60 , MSF8N80 , MSF9N20 , MSF9N70 , MSF9N90 , K3569 , MSK1N3 , MSK2N60F , MSK2N60T , MSK4D5N60F , MSK4D5N60T , MSK4N80F , MSK4N80T , MSK7D5N60F .

History: IPL65R1K0C6S | MFT60N12T22FS

Keywords - MSK19N03 MOSFET datasheet

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