MSK19N03 Datasheet. Specs and Replacement

Type Designator: MSK19N03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 423 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm

Package: DFN3X3

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MSK19N03 datasheet

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MSK19N03

Bruckewell Technology Corp., Ltd. http //www.bruckewell-semicon.com/ N-Channel 30-V (D-S) MOSFET MSK19N03 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compu... See More ⇒

Detailed specifications: MSF7N65, MSF7N80, MSF8N50, MSF8N60, MSF8N80, MSF9N20, MSF9N70, MSF9N90, K3569, MSK1N3, MSK2N60F, MSK2N60T, MSK4D5N60F, MSK4D5N60T, MSK4N80F, MSK4N80T, MSK7D5N60F

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