All MOSFET. MSK1N3 Datasheet

 

MSK1N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSK1N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.115 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 3.42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: SOT-23

 MSK1N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSK1N3 Datasheet (PDF)

 ..1. Size:578K  bruckewell
 msk1n3.pdf

MSK1N3 MSK1N3

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MSK1N3 N-Channel Logic Level Enhancement Mode MOSFET The MSK1N3 is a N-channel enhancement-mode MOSFET. Key Features: Low on-resistance High ESD High speed switching Low-voltage drive (4V) Easily designed drive circuits Easy to use in parallel Pb-free package Preliminary Data S

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History: FDMS8026S

 

 
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