MSK1N3 Datasheet. Specs and Replacement

Type Designator: MSK1N3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.115 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 3.42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: SOT-23

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MSK1N3 datasheet

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MSK1N3

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MSK1N3 N-Channel Logic Level Enhancement Mode MOSFET The MSK1N3 is a N-channel enhancement-mode MOSFET. Key Features Low on-resistance High ESD High speed switching Low-voltage drive (4V) Easily designed drive circuits Easy to use in parallel Pb-free package Preliminary Data S... See More ⇒

Detailed specifications: MSF7N80, MSF8N50, MSF8N60, MSF8N80, MSF9N20, MSF9N70, MSF9N90, MSK19N03, IRFP260, MSK2N60F, MSK2N60T, MSK4D5N60F, MSK4D5N60T, MSK4N80F, MSK4N80T, MSK7D5N60F, MSK7D5N60T

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