MSK1N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: MSK1N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.115 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 3.42 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: SOT-23
MSK1N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSK1N3 Datasheet (PDF)
..1. Size:578K bruckewell
msk1n3.pdf
msk1n3.pdf
Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MSK1N3 N-Channel Logic Level Enhancement Mode MOSFET The MSK1N3 is a N-channel enhancement-mode MOSFET. Key Features: Low on-resistance High ESD High speed switching Low-voltage drive (4V) Easily designed drive circuits Easy to use in parallel Pb-free package Preliminary Data S
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