All MOSFET. MSK1N3 Datasheet

 

MSK1N3 Datasheet and Replacement


   Type Designator: MSK1N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 3.42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: SOT-23
 

 MSK1N3 substitution

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MSK1N3 Datasheet (PDF)

 ..1. Size:578K  bruckewell
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MSK1N3

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MSK1N3 N-Channel Logic Level Enhancement Mode MOSFET The MSK1N3 is a N-channel enhancement-mode MOSFET. Key Features: Low on-resistance High ESD High speed switching Low-voltage drive (4V) Easily designed drive circuits Easy to use in parallel Pb-free package Preliminary Data S

Datasheet: MSF7N80 , MSF8N50 , MSF8N60 , MSF8N80 , MSF9N20 , MSF9N70 , MSF9N90 , MSK19N03 , IRFP260 , MSK2N60F , MSK2N60T , MSK4D5N60F , MSK4D5N60T , MSK4N80F , MSK4N80T , MSK7D5N60F , MSK7D5N60T .

History: MSK2N60T | IXTP230N04T4M

Keywords - MSK1N3 MOSFET datasheet

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