MSK2N60T Datasheet. Specs and Replacement

Type Designator: MSK2N60T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 59.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-220

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MSK2N60T datasheet

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MSK2N60T

600V/2.0A N-Channel MOSFET MSK2N60T/F 600V/2.0A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for switching mode power supplies TO-220 Features VDSS=600V, ID=2.0A; Low Drain-Source ON Resistance RDS(ON) =5.0 @ VGS=10V Qg(typ.)=10.9nC RoHS C... See More ⇒

Detailed specifications: MSF8N60, MSF8N80, MSF9N20, MSF9N70, MSF9N90, MSK19N03, MSK1N3, MSK2N60F, SPP20N60C3, MSK4D5N60F, MSK4D5N60T, MSK4N80F, MSK4N80T, MSK7D5N60F, MSK7D5N60T, MSK7N80F, MSK7N80T

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