All MOSFET. MSK4N80F Datasheet

 

MSK4N80F Datasheet and Replacement


   Type Designator: MSK4N80F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59.5 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
   Package: TO-220F
 

 MSK4N80F substitution

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MSK4N80F Datasheet (PDF)

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MSK4N80F

800V/4A N-Channel MOSFET MSK4N80T/F800V/4A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for active power factor correction Suitable for switching mode power supplies TO-220Features VDSS=800V, ID=4A; Low Drain-Source ON Resistance: RDS(ON) =3.6

Datasheet: MSF9N70 , MSF9N90 , MSK19N03 , MSK1N3 , MSK2N60F , MSK2N60T , MSK4D5N60F , MSK4D5N60T , TK10A60D , MSK4N80T , MSK7D5N60F , MSK7D5N60T , MSK7N80F , MSK7N80T , MSK9N50F , MSK9N50T , MSP02N10 .

History: IPA80R600P7

Keywords - MSK4N80F MOSFET datasheet

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