MSK4N80T Datasheet. Specs and Replacement

Type Designator: MSK4N80T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59.5 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm

Package: TO-220

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MSK4N80T datasheet

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MSK4N80T

800V/4A N-Channel MOSFET MSK4N80T/F 800V/4A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for active power factor correction Suitable for switching mode power supplies TO-220 Features VDSS=800V, ID=4A; Low Drain-Source ON Resistance RDS(ON) =3.6 ... See More ⇒

Detailed specifications: MSF9N90, MSK19N03, MSK1N3, MSK2N60F, MSK2N60T, MSK4D5N60F, MSK4D5N60T, MSK4N80F, AON7410, MSK7D5N60F, MSK7D5N60T, MSK7N80F, MSK7N80T, MSK9N50F, MSK9N50T, MSP02N10, MSP2301N3

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