MSK7D5N60T Datasheet and Replacement
Type Designator: MSK7D5N60T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 5.5 nC
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 121.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220
MSK7D5N60T substitution
MSK7D5N60T Datasheet (PDF)
msk7d5n60f msk7d5n60t.pdf

600V/7.5A N-Channel MOSFET MSK7D5N60T/F600V/7.5A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for active power factor correction Suitable for switching mode power supplies TO-220Features VDSS=600V, ID=7.5A; Low Drain-Source ON Resistance: RDS(ON) =
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: APT50M38JLL
Keywords - MSK7D5N60T MOSFET datasheet
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History: APT50M38JLL



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