All MOSFET. MSK7N80F Datasheet

 

MSK7N80F Datasheet and Replacement


   Type Designator: MSK7N80F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 85 nC
   tr ⓘ - Rise Time: 63.5 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO-220F
 

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MSK7N80F Datasheet (PDF)

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MSK7N80F

800V/7A N-Channel MOSFET MSK7N80T/F800V/7A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for electronic ballast Suitable for switching mode power supplies TO-220Features VDSS=800V, ID=7A; Low Drain-Source ON Resistance: RDS(ON) =1.55 @ VGS=10V

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Keywords - MSK7N80F MOSFET datasheet

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