MSK9N50T Datasheet. Specs and Replacement

Type Designator: MSK9N50T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 155.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220

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MSK9N50T datasheet

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MSK9N50T

500V/9A N-Channel MOSFET MSK9N50T/F 500V/9A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for electronic ballast Suitable for switching mode power supplies TO-220 Features VDSS=500V, ID=9A; Low Drain-Source ON Resistance RDS(ON) =0.8 @ VGS=10V ... See More ⇒

Detailed specifications: MSK4D5N60T, MSK4N80F, MSK4N80T, MSK7D5N60F, MSK7D5N60T, MSK7N80F, MSK7N80T, MSK9N50F, IRF530, MSP02N10, MSP2301N3, MSQ27N30, MSQ2N60, MSQ4N60, MSQ5N50, MSQ6N30, MSQ6N40

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