All MOSFET. MSK9N50T Datasheet

 

MSK9N50T Datasheet and Replacement


   Type Designator: MSK9N50T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.9 nC
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 155.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220
 

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MSK9N50T Datasheet (PDF)

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MSK9N50T

500V/9A N-Channel MOSFET MSK9N50T/F500V/9A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for electronic ballast Suitable for switching mode power supplies TO-220Features VDSS=500V, ID=9A; Low Drain-Source ON Resistance: RDS(ON) =0.8 @ VGS=10V

Datasheet: MSK4D5N60T , MSK4N80F , MSK4N80T , MSK7D5N60F , MSK7D5N60T , MSK7N80F , MSK7N80T , MSK9N50F , AO4407 , MSP02N10 , MSP2301N3 , MSQ27N30 , MSQ2N60 , MSQ4N60 , MSQ5N50 , MSQ6N30 , MSQ6N40 .

History: IRF1018EPBF | TMD2N60AZ

Keywords - MSK9N50T MOSFET datasheet

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