MSK9N50T MOSFET. Datasheet pdf. Equivalent
Type Designator: MSK9N50T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.9 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 155.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220
MSK9N50T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSK9N50T Datasheet (PDF)
..1. Size:634K taitron
msk9n50f msk9n50t.pdf
msk9n50f msk9n50t.pdf
500V/9A N-Channel MOSFET MSK9N50T/F500V/9A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for electronic ballast Suitable for switching mode power supplies TO-220Features VDSS=500V, ID=9A; Low Drain-Source ON Resistance: RDS(ON) =0.8 @ VGS=10V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
